Method for manufacturing integrated devices including electromechanical microstructures, without residual stress
US6331444A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2000 |
| Grant date | Dec 18, 2001 |
| Priority date | — |
| Expiry date | Feb 8, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0828
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
On a substrate of semiconductor material, a sacrificial region is formed and an epitaxial layer is grown; a stress release trench is formed, surrounding an area of the epitaxial layer, where an integrated electromechanical microstructure is to be formed; the wafer is then heat treated, to release residual stress. Subsequently, the stress release trench is filled with a sealing region of dielectric material, and integrated components are formed. Finally, inside the area surrounded by the sealing region, a microstructure definition trench is formed, and the sacrificial region is removed, thus obtaining an integrated microstructure with zero residual stress.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.