Semiconductor device manufacturing method using electrostatic chuck and semiconductor device manufacturing system
US6333246A · kind A · utility
9Cited by
3References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 28, 2000 |
| Grant date | Dec 25, 2001 |
| Priority date | — |
| Expiry date | Jun 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor device manufacturing method comprises the steps of placing a substrate to be processed on an electrostatic chuck on a substrate stand in a process chamber, and applying a negative voltage to the electrostatic chuck. After applying the negative voltage, the substrate is stuck onto the electrostatic chuck, a process gas is introduced into the process chamber, discharge plasma is generated, and the substrate is processed as predetermined.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.