Dopant control of semiconductor devices
US6333531A · kind A · utility
1Cited by
10References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1999 |
| Grant date | Dec 25, 2001 |
| Priority date | — |
| Expiry date | Jan 29, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/0385
Abstract
A process for forming a small grain structure in a material within a semiconductor device near the interface of an adjacent dissimilar material, to result in a highly diffusive grain structure. The highly diffusive grain structure formed within one material enhances diffusion of a dopant impurity, and provides for improved dopant control in an adjacent dissimilar material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.