Semiconductor device and method of manufacturing the same
US6333547A · kind A · utility
68Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 6, 2000 |
| Grant date | Dec 25, 2001 |
| Priority date | — |
| Expiry date | Jan 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Hexachlorodisilane (Si.sub.2 Cl.sub.6) is used as a Si raw material for forming a silicon nitride film that can be widely different in the etching rate from a silicon oxide film. The silicon nitride film is formed by an LPCVD method.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.