Single-crystal silicon wafer having few crystal defects and method for manufacturing the same
US6334896B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 11, 2000 |
| Grant date | Jan 1, 2002 |
| Priority date | — |
| Expiry date | Jul 11, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B15/206
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for producing a silicon single crystal, wherein, when a silicon single crystal is grown by the Czochralski method, the crystal is pulled with such conditions as present in a region defined by a boundary between a V-rich region and an N-region and a boundary between an N-region and an I-rich region in a defect distribution chart showing defect distribution which is plotted with D [mm] as abscissa and F/G [mm2/° C.·min] as ordinate, wherein D represents a distance between center of the crystal and periphery of the crystal, F/G [mm/min] represents a pulling rate and G [° C./mm] represents an average temperature gradient along the crystal pulling axis direction in the temperature range of from the melting point of silicon to 1400° C., and time required for crystal temperature to pass through the temperature region of from 900° C. to 600° C. is controlled to be 700 minutes or shorter, and a silicon single crystal wafer grown by the Czochralski method, which is a silicon single crystal wafer having N-region for its entire plane, and does not generate OSFs by a single-step thermal oxidation treatment, but generates OSFs by a two-step thermal oxidation t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.