Gas chemistry cycling to achieve high aspect ratio gapfill with HDP-CVD
US6335288B1 · kind B1 · utility
317Cited by
42References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 24, 2000 |
| Grant date | Jan 1, 2002 |
| Priority date | — |
| Expiry date | Aug 24, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/911
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method and apparatus are disclosed for depositing a dielectric film in a gap having an aspect ratio at least as large as 6:1. By cycling the gas chemistry of a high-density-plasma chemical-vapor-deposition system between deposition and etching conditions, the gap may be substantially 100% filled. Such filling is achieved by adjusting the flow rates of the precursor gases such that the deposition to sputtering ratio during the deposition phases is within certain predetermined limits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.