Contactless method for measuring total charge of an oxide layer on a semiconductor wafer using corona charge
US6335630B1 · kind B1 · utility
3Cited by
7References
7Claims
0Family size
Inventors
Key dates
| Filing date | Dec 26, 2000 |
| Grant date | Jan 1, 2002 |
| Priority date | — |
| Expiry date | Dec 26, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2831
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of measuring total charge of an insulating layer on a semiconductor substrate includes applying corona charges to the insulating layer and measuring a surface photovoltage of the insulating layer after applying each of the corona charges. The charge density of each of the corona charges is measured with a coulombmeter. A total corona charge required to obtain a surface photovoltage of a predetermined fixed value is determined and used to calculate the total charge of the insulating layer. The fixed value corresponds to either a flatband or midband condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.