Graded composition diffusion barriers for chip wiring applications
US6337151B1 · kind B1 · utility
23Cited by
34References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1999 |
| Grant date | Jan 8, 2002 |
| Priority date | — |
| Expiry date | Aug 18, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A barrier film for a semiconductor device structure. The barrier film includes a compound including nitrogen and at least one of titanium or tantalum, nitrogen in a concentration that varies within the barrier film, and oxygen in a concentration that varies within the barrier film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.