Method for fabricating a semiconductor capacitor
US6337173B2 · kind B2 · utility
13Cited by
16References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 10, 1998 |
| Grant date | Jan 8, 2002 |
| Priority date | — |
| Expiry date | Dec 10, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a capacitor electrode on a semiconductor substrate includes the steps of: forming a conducting layer over the semiconductor substrate; forming a photoresist layer over the conducting layer; pattering the photoresist layer through an interfering exposure step; and pattering the conducting layer using the patterned photoresist layer as a mask, thereby forming a capacitor electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.