Capacitor stack structure and method of fabricating description

US6339007B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Yun-Yu Wang · Poughquag, US
• Rajarao Jammy · Hopewell Junction, US
• Lee J. Kimball · Newburgh, US
• David E. Kotecki · Hopewell Junction, US
• Jenny Lian · Oshima, JP
• Chenting Lin · Poughkeepsie, US
• John A. Miller · North Palm Beach, US
• Nicholas L. Nagel · Munich, DE
• Hua Shen · Beacon, US
• Horatio S. Wildman · Wappingers Falls, US

Key dates

• Filing date: May 2, 2000
• Grant date: Jan 15, 2002
• Expiry date: May 2, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/692

Abstract

A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second insulator portion is provided.