Jenny Lian
16Patents
6h-index
35Co-inventors
62Inventor score
Filing activity: Mar 26, 1999 → Nov 21, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6261967A | Easy to remove hard mask layer for semiconductor device fabrication | Electricity | 38 | Expired |
| US6420272B1 | Method for removal of hard mask used to define noble metal electrode | Electricity | 16 | Expired |
| US6207584A | High dielectric constant material deposition to achieve high capacitance | Electricity | 14 | Expired |
| US6339007B1 | Capacitor stack structure and method of fabricating description | Electricity | 9 | Expired |
| US7071506B2 | Device for inhibiting hydrogen damage in ferroelectric capacitor devices | Electricity | 6 | Expired |
| US7674703B1 | Gridded contacts in semiconductor devices | Electricity | 6 | Active |
| US6083788A | Stacked capacitor memory cell and method of manufacture | Electricity | 6 | Expired |
| US6946735B2 | Side-wall barrier structure and method of fabrication | Electricity | 4 | Expired |
| US7041551B2 | Device and a method for forming a capacitor device | Electricity | 4 | Expired |
| US6420267B1 | Method for forming an integrated barrier/plug for a stacked capacitor | Electricity | 3 | Expired |
| US6365328B1 | Semiconductor structure and manufacturing method | Electricity | 1 | Expired |
| US6734057B2 | Method of patterning capacitors and capacitors made thereby | Electricity | 1 | Expired |
| US7316980B2 | Method for forming ferrocapacitors and FeRAM devices | Electricity | 1 | Expired |
| US8518820B2 | Methods for forming contacts in semiconductor devices | Electricity | 0 | Active |
| US7002196B2 | Ferroelectric capacitor devices and FeRAM devices | Electricity | 0 | Expired |
| US7001781B2 | Method for producing a ferroelectric capacitor that includes etching with hardmasks | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.