Method of fabricating a copper capping layer
US6339025B1 · kind B1 · utility
19Cited by
2References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 3, 1999 |
| Grant date | Jan 15, 2002 |
| Priority date | — |
| Expiry date | Apr 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a copper capping layer. A silicon rich nitride layer is formed on an exposed copper layer. Since the silicon rich nitride layer has more dangling bonds inside, the silicon in the silicon rich nitride layer easily reacts with the copper and a copper silicide layer is formed between the copper and the silicon rich nitride layer. Therefore, adhesion of the copper and the silicon rich nitride layer can be improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.