Method to deposit SiOCH films with dielectric constant below 3.0

US6340628B1 · kind B1 · utility

Assignee

• Novellus Systems, Inc. · US

Inventors

• Patrick A. Van Cleemput · San Jose, US
• Ravi Laxman · San Jose, US
• Jen Shu · Saratoga, US
• Michelle T. Schulberg · Palo Alto, US
• Bunsen B. Nie · Fremont, US

Key dates

• Filing date: Dec 12, 2000
• Grant date: Jan 22, 2002
• Expiry date: Dec 12, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A chemical vapor deposition (CVD) process uses a precursor gas, such as with a siloxane or alkylsilane, and a carbon-dioxide-containing gas, such as CO2 with O2 or CO2 with CxH(2x+1)OH where 1≦x≦5, to deposit a dielectric layer with no photoresist “footing”, a low dielectric constant, and high degrees of adhesion and hardness. Because nitrogen is not used in the deposition process (the carbon-dioxide-containing gas replaces nitrogen-containing gases in conventional processes), amines do not build into the deposited layer, thereby preventing photoresist “footing”.