Group III nitride compound semiconductor device and method for producing
US6342404B1 · kind B1 · utility
87Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2000 |
| Grant date | Jan 29, 2002 |
| Priority date | — |
| Expiry date | Mar 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02639
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A group III nitride compound semiconductor device is produced according to the following manner. A separation layer made of a material which prevents group III nitride compound semiconductors from being grown thereon is formed on a substrate. Group III nitride compound semiconductors is grown on a surface of the substrate uncovered with the separation layer while keeping the uncovered substrate surface separated by the separation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.