Apparatus and method for thermal processing of semiconductor substrates
US6342691B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1999 |
| Grant date | Jan 29, 2002 |
| Priority date | — |
| Expiry date | Nov 12, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B31/12
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semiconductor substrate processing system and method of using a stable heating source with a large thermal mass relative to conventional lamp heating systems. The system dimensions and processing parameters are selected to provide a substantial heat flux to the substrate while reducing the potential of heat loss to the surrounding environment, particularly from the edges of the heat source and substrate. Aspects of the present invention include a dual resistive heater system comprising a base or primary heater, surrounded by a peripheral or edge heater. The impedance of the edge heater may be substantially matched to that of the primary heater such that a single power supply may be used to supply power to both heaters. Both resistive heaters deliver heat to a heated block, and the heaters and heated block are substantially enclosed within an insulated cavity. The walls of the insulated cavity may include multiple layers of insulation, and these layers may be substantially concentrically arranged. The innermost layers may comprise silicon carbide coated graphite; the outer layers may comprise opaque quartz. An embodiment of the invention includes a vacuum spool having a large cond…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.