Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
US6344432B1 · kind B1 · utility
35Cited by
6References
14Claims
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Key dates
| Filing date | Dec 8, 2000 |
| Grant date | Feb 5, 2002 |
| Priority date | — |
| Expiry date | Dec 8, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A semiconductor wafer cleaning formulation, including 2-98% wt. organic amine, 0-50% wt. water, 0.1-60% wt. 1,3-dicarbonyl compound chelating agent, 0-25% wt. of additional different chelating agent(s), 0.5-40% wt. nitrogen-containing carboxylic acid or an imine, and 2-98% wt polar organic solvent. The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.