Copolymer resin, preparation thereof, and photoresist using the same
US6348296B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 30, 1998 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Aug 24, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08F222/06
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
The present invention relates to a copolymer resin for a photoresist used with ultra-short wavelength light source such as KrF or ArF, a process for preparation thereof, and a photoresist comprising said resin. By introducing 2,3-di-t-butyl-5-norbornene-2,3-dicarboxylate unit into the structure of a norbornene-maleic anhydride copolymer, the copolymer resin according to the present invention is easily prepared by conventional radical polymerization, has high transparency at 193 nm wavelength, provides increased etching resistance, prevents the top loss phenomenon, exhibits enhanced adhesive strength due to increasing protection ratio in the copolymer resin, and shows excellent resolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.