Suppression of hillock formation in thin aluminum films
US6348403B1 · kind B1 · utility
13Cited by
11References
16Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Aug 31, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multilayer structure is provided which suppresses hillock formation due to post-heat treatment steps in thin aluminum films deposited on other substrates by sandwiching the aluminum film between thin layers of aluminum titanium nitride. The first aluminum titanium nitride layer acts as a compatibilizing layer to provide a better match between the coefficients of thermal expansion of the substrate and aluminum metal layer. The second aluminum titanium nitride layer acts as a cap layer to suppress hillock formation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.