NROM cell with self-aligned programming and erasure areas
US6348711B1 · kind B1 · utility
143Cited by
14References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 6, 1999 |
| Grant date | Feb 19, 2002 |
| Priority date | — |
| Expiry date | Oct 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nitride programmable read only memory (NROM) cell has an oxide-nitride-oxide layer over at least a channel and a pocket implant self-aligned to at least one bit line junction. The cell also includes at least one area of hot electron injection within the ONO layer and over the pocket implant and at least one area of hot hole injection generally self-aligned to the area of hot electron injection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.