Inventor · Raanana, IL

Boaz Eitan

129Patents
44h-index
54Co-inventors
93Inventor score

Filing activity: Dec 4, 1981 → Aug 31, 2021

Most-cited inventions

PatentTitleAreaCited byStatus
US6011725A Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping Electricity 1,212 Expired
US5768192A Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping Physics 1,055 Expired
US5966603A NROM fabrication method with a periphery portion Electricity 291 Expired
US6552387B1 Non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping Physics 194 Expired
US6030871A Process for producing two bit ROM cell utilizing angled implant Electricity 187 Expired
US6215148A NROM cell with improved programming, erasing and cycling Electricity 162 Expired
US6292394A Method for programming of a semiconductor memory cell Physics 154 Expired
US6201282A Two bit ROM cell and process for producing same Electricity 149 Expired
US6134156A Method for initiating a retrieval procedure in virtual ground arrays Physics 148 Expired
US6348711B1 NROM cell with self-aligned programming and erasure areas Electricity 143 Expired
US6429063B1 NROM cell with generally decoupled primary and secondary injection Electricity 135 Expired
US6477084B2 NROM cell with improved programming, erasing and cycling Electricity 130 Expired
US5204835A EPROM virtual ground array Physics 113 Expired
US6490204B2 Programming and erasing methods for a reference cell of an NROM array Physics 113 Expired
US6396741B1 Programming of nonvolatile memory cells Physics 110 Expired
US6643181B2 Method for erasing a memory cell Physics 107 Expired
US5432730A Electrically programmable read only memory array Physics 103 Expired
US5042009A Method for programming a floating gate memory device Physics 101 Expired
US5963465A Symmetric segmented memory array architecture Physics 100 Expired
US6128226A Method and apparatus for operating with a close to ground signal Physics 90 Expired
US6566699B2 Non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping Physics 90 Expired
US5796313A Low power programmable ring oscillator Electricity 82 Expired
US6768165B1 Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping Electricity 77 Expired
US4639893A Self-aligned split gate EPROM Electricity 73 Expired
US6928001B2 Programming and erasing methods for a non-volatile memory cell Physics 64 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.