Method for making a semiconductor device having a carbon doped oxide insulating layer
US6350670B1 · kind B1 · utility
24Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 17, 1999 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Dec 17, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method of forming a semiconductor device that has a carbon doped oxide insulating layer. The method comprises forming a first insulating layer that includes a carbon doped oxide, then forming on the surface of the first insulating layer a second insulating layer that comprises silicon dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.