Method of fabricating improved copper metallization including forming and removing passivation layer before forming capping film
US6350687B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 18, 1999 |
| Grant date | Feb 26, 2002 |
| Priority date | — |
| Expiry date | Mar 18, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/976
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A selected passivating layer is purposely formed on an exposed surface of a Cu and/or Cu alloy interconnect member, thereby avoiding the adverse consequences stemming from formation of a thick copper oxide layer thereon. The passivating layer is formed by treating the exposed surface of the Cu or Cu alloy interconnect member: (a) with a copper corrosion-inhibiting chemical; or (b) by electroless plating a metal layer on the surface of the Cu or Cu alloy layer; or (c) depositing a metallic compound on the surface of the Cu or Cu alloy layer by CVD. The passivating layer can then be removed. Embodiments include electroplating or electroless plating Cu or a Cu alloy to fill a damascene opening in an ILD, chemical mechanical polishing, then treating the exposed surface of the Cu/Cu alloy interconnect to form the passivating, layer thereon, and depositing a silicon nitride diffusion barrier layer thereon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.