Method and apparatus for improved chemical vapor deposition processes using tunable temperature controlled gas injectors
US6352594B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 14, 1999 |
| Grant date | Mar 5, 2002 |
| Priority date | — |
| Expiry date | Jan 14, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67115
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A multiwafer chemical vapor deposition (CVD) reactor providing improved material deposition uniformity through use of improved gas injection and exhaust apparatus. The reactor includes a wafer boat for supporting a vertical stack of wafers, spaced apart for passage of a reactant gas. A preferred embodiment of the gas injector is in the form of a vertically oriented body having at a first end a gas inlet, and extending inward from a wall of the reactor towards the wafer boat, terminating in a widened injector outlet. The injector body and outlet extend vertically a distance approximating the height of the wafer boat, and the outlet is widened to provide an improved flow of gas across the wafer. A face of the injector outlet contains a plurality of gas ejecting holes, arranged to provide a uniform supply of reactant gas over each wafer surface. The exhaust manifold is similarly configured, having a plurality of exhaust ports distributed over the height of the manifold to assist in preserving the uniform flow of reactant gas across each wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.