Phase shift mask and making process
US6352801B1 · kind B1 · utility
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13Claims
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Assignee
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Key dates
| Filing date | May 19, 2000 |
| Grant date | Mar 5, 2002 |
| Priority date | — |
| Expiry date | May 19, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/54
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A phase shift mask has a phase shifter formed on a substrate which is transmissive to exposure light. The phase shifter serving as a second light transmissive region is constructed of gadolinium gallium garnet. The shifter film formed under the sputtering conditions capable of restraining the generation of particles causing film defects is homogeneous, and the phase shift mask is of high precision.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.