Process of forming a capacitor on a substrate
US6352902B1 · kind B1 · utility
7Cited by
19References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2000 |
| Grant date | Mar 5, 2002 |
| Priority date | — |
| Expiry date | Jul 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A trench capacitor for use with a substrate. The capacitor has an inner electrode formed above the substrate. The inner electrode has a plurality of metal layers, a dielectric partially surrounding the inner electrode, and an outer electrode partially surrounding the dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.