Semiconductor surge absorber, electrical-electronic apparatus, and power module using the same
US6353236B1 · kind B1 · utility
22Cited by
15References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 1999 |
| Grant date | Mar 5, 2002 |
| Priority date | — |
| Expiry date | Sep 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/13055
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A wide bandgap semiconductor single crystal is applied as a semiconductor substrate material of a semiconductor surge absorber, and a surge absorption operation starting voltage is set by a punchthrough of a pn junction, to obtain a semiconductor surge absorber with a repetitive operation and a high surge endurance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.