Patent · US Expired

Controlling transistor threshold potentials using substrate potentials

US6353357B1 · kind B1 · utility

9Cited by

4References

3Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Robert Kaiser · Kaufering, DE
Helmut Schneider · Hersbruck, DE

Key dates

Filing date	Oct 20, 2000
Grant date	Mar 5, 2002
Priority date	—
Expiry date	Oct 20, 2020

Classification

Technology area (CPC H)Electricity
CPC primaryH03K19/0027
WIPO fieldBasic communication processes
WIPO sectorElectrical engineering

Abstract

An integrated circuit has a first control unit for controlling the threshold potential of the transistors of a first conductivity type. In addition, it has a second control unit for controlling the threshold potentials of the transistors of a second conductivity type. The required value input of the second control unit is supplied with a required value for the threshold potential of the transistors of the second conductivity type, which is proportional to the actual value of the threshold potential of the transistors of the first conductivity type. Due to the dependence of the second control unit on the control by the first control unit, improved switching characteristics of the integrated circuit are achieved.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.