Ion source and method for using same
US6355933B1 · kind B1 · utility
11Cited by
7References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 1999 |
| Grant date | Mar 12, 2002 |
| Priority date | — |
| Expiry date | Jan 13, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Damaging forming deposits and etching is reduced in an ion source by introducing an oxygenated gas during operation of the ion source. Embodiments include an ion source in fluid communication with a source of oxygenated gas and introducing about 1% to about 10% of carbondioxide as the oxygenated gas together with a feed material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.