Inventor · San Jose, CA, US

Robert B. Ogle

51Patents
17h-index
42Co-inventors
84Inventor score

Filing activity: Sep 5, 1996 → May 4, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US6674138B1 Use of high-k dielectric materials in modified ONO structure for semiconductor devices Electricity 256 Expired
US5939763A Ultrathin oxynitride structure and process for VLSI applications Electricity 190 Expired
US6451641B1 Non-reducing process for deposition of polysilicon gate electrode over high-K gate dielectric material Electricity 110 Expired
US6803272B1 Use of high-K dielectric material in modified ONO structure for semiconductor devices Electricity 108 Expired
US6645882B1 Preparation of composite high-K/standard-K dielectrics for semiconductor devices Electricity 82 Expired
US6245689A Process for reliable ultrathin oxynitride formation Electricity 74 Expired
US6265268A High temperature oxide deposition process for fabricating an ONO floating-gate electrode in a two bit EEPROM device Electricity 63 Expired
US6319775A Nitridation process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device Electricity 37 Expired
US6867097B1 Method of making a memory cell with polished insulator layer Electricity 29 Expired
US6180538A Process for fabricating an ONO floating-gate electrode in a two-bit EEPROM device using rapid-thermal-chemical-vapor-deposition Electricity 28 Expired
US5879975A Heat treating nitrogen implanted gate electrode layer for improved gate electrode etch profile Electricity 26 Expired
US6825115B1 Post silicide laser thermal annealing to avoid dopant deactivation Electricity 23 Expired
US6656749B1 In-situ monitoring during laser thermal annealing Electricity 23 Expired
US6780789B1 Laser thermal oxidation to form ultra-thin gate oxide Electricity 19 Expired
US6555439B1 Partial recrystallization of source/drain region before laser thermal annealing Electricity 18 Expired
US6512264B1 Flash memory having pre-interpoly dielectric treatment layer and method of forming Electricity 18 Expired
US6680250B1 Formation of deep amorphous region to separate junction from end-of-range defects Electricity 18 Expired
US6278166A Use of nitric oxide surface anneal to provide reaction barrier for deposition of tantalum pentoxide Electricity 13 Expired
US7001814B1 Laser thermal annealing methods for flash memory devices Electricity 13 Expired
US6812106B1 Reduced dopant deactivation of source/drain extensions using laser thermal annealing Electricity 13 Expired
US6355933B1 Ion source and method for using same Electricity 11 Expired
US6743689B1 Method of fabrication SOI devices with accurately defined monocrystalline source/drain extensions Electricity 10 Expired
US7602067B2 Hetero-structure variable silicon rich nitride for multiple level memory flash memory device Electricity 9 Active
US6867080B1 Polysilicon tilting to prevent geometry effects during laser thermal annealing Emerging Cross-Sectional Technologies 8 Expired
US6306777A Flash memory having a treatment layer disposed between an interpoly dielectric structure and method of forming Electricity 8 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.