Method for producing semiconductor device, method for producing semiconductor laser device, and method for producing quantum wire structure
US6358316B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 9, 1995 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Mar 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In a method for producing a semiconductor device, a compound semiconductor cap layer including no aluminum is grown on a compound semiconductor layer including aluminum, a mask pattern insulating film is formed on a part of the compound semiconductor cap layer, the compound semiconductor wafer with the insulating mask pattern is immersed in an ammonium sulfide solution, the compound semiconductor wafer is selectively etched away using a chlorine containing gas in a reaction chamber, and a groove formed in the etching process is filled with a compound semiconductor layer grown in the reaction chamber by MOCVD. Therefore, a regrowth interface on which no impurity is segregated is attained, improving the quality of the regrown crystal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.