Process for controlling lifetime in a P-I-N diode and for forming diode with improved lifetime control
US6358825B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 21, 2000 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Nov 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/50
Abstract
In an improved process for controlling and improving minority carrier lifetime in a P-i-N diode, platinum is deposited on a surface of a silicon semiconductor substrate containing at least one PN junction. The substrate is heated to a temperature of about 800° C., and the platinum is diffused into the substrate as its temperature is increased at a rate of about 5° C./minute to a first selected temperature of about 850-950° C. Platinum diffusion is continued while the substrate is maintained at the first selected temperature for about 30-60 minutes. The substrate temperature is then increased at a rate of about 5° C./minute to a second selected temperature above 950° C. to about 1000° C., and the substrate is maintained at the second selected temperature for about 5-30 minutes before cooling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.