Orientation independent oxidation of silicon
US6358867B1 · kind B1 · utility
22Cited by
9References
22Claims
0Family size
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Key dates
| Filing date | Jun 16, 2000 |
| Grant date | Mar 19, 2002 |
| Priority date | — |
| Expiry date | Jun 16, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/973
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an oxide of substantially uniform thickness on at least two crystallographic planes of silicon, in accordance with the present invention, includes providing a substrate where silicon surfaces have at least two different crystallographic orientations of the silicon crystal. Atomic oxygen (O) is formed for oxidizing the surfaces. An oxide is formed on the surfaces by reacting the atomic oxygen with the surfaces to simultaneously form a substantially uniform thickness of the oxide on the surfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.