Process of controlling grain growth in metal films
US6361627B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 11, 2000 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | May 11, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12903
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A process for controlling grain growth in the microstructure of thin metal films (e.g., copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100°C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than −20° C., wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.