Apparatus and method for plating wafers, substrates and other articles
US6361669B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 15, 2000 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Aug 15, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S204/07
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plating apparatus and methodology is disclosed that is particularly useful in improving the plating rate, improving the plating of via holes, improving the uniformity of the plating deposition across the surface of the wafer, and minimizing damage to the wafer. With regard to improving the plating rate and the plating of via holes, the plating apparatus and method immerses a wafer in a plating fluid bath and continuously directs plating fluid towards the surface of the wafer. Immersing the wafer in a plating fluid bath reduces the occurrence of trapped gas pockets within via holes which makes it easier to plate them. The continuous directing of plating fluid towards the surface of the wafer increases the ion concentration gradient which is, in turn, increases the plating rate. With regard to improving the uniformity of the plating deposition, the plating apparatus and method effectuate random horizontal fluid flow within the bath to reduce the occurrence of relatively long horizontal fluid flow that causes non-uniform plating deposition across the surface of the wafer. In addition, the plating apparatus and method configure the electrostatic field between the anode and cathode in…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.