Patent · US Expired

CVD/PVD/CVD/PVD fill process

US6361880B1 · kind B1 · utility

2Cited by
9References
5Claims
0Family size

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Key dates

Filing dateDec 22, 1999
Grant dateMar 26, 2002
Priority date
Expiry dateDec 22, 2019

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/2495
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method is provided in which intermediate sized structures can be filled without forming voids during the fill process. The methods involve use of a sequence of CVD/PVD/CVD/PVD steps. The methods are especially effective for filling “intermediate” size features in damascene and dual damascene structures.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.