Roy Iggulden
22Patents
9h-index
47Co-inventors
71Inventor score
Filing activity: Mar 31, 1998 → Aug 3, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6383920B1 | Process of enclosing via for improved reliability in dual damascene interconnects | Electricity | 102 | Expired |
| US6252292A | Vertical electrical cavity-fuse | Electricity | 27 | Expired |
| US6242789A | Vertical fuse and method of fabrication | Electricity | 24 | Expired |
| US7560375B2 | Gas dielectric structure forming methods | Electricity | 21 | Expired |
| US6444565B1 | Dual-rie structure for via/line interconnections | Electricity | 20 | Expired |
| US6218279A | Vertical fuse and method of fabrication | Electricity | 20 | Expired |
| US6734097B2 | Liner with poor step coverage to improve contact resistance in W contacts | Electricity | 18 | Expired |
| US6433436B1 | Dual-RIE structure for via/line interconnections | Electricity | 13 | Expired |
| US6057236A | CVD/PVD method of filling structures using discontinuous CVD AL liner | Electricity | 11 | Expired |
| US6887785B1 | Etching openings of different depths using a single mask layer method and structure | Electricity | 9 | Expired |
| US6448173B1 | Aluminum-based metallization exhibiting reduced electromigration and method therefor | Electricity | 9 | Expired |
| US6870263B1 | Device interconnection | Electricity | 8 | Expired |
| US7119545B2 | Capacitive monitors for detecting metal extrusion during electromigration | Electricity | 5 | Expired |
| US6136709A | Metal line deposition process | Electricity | 5 | Expired |
| US7287325B2 | Method of forming interconnect structure or interconnect and via structures using post chemical mechanical polishing | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6361880B1 | CVD/PVD/CVD/PVD fill process | Emerging Cross-Sectional Technologies | 2 | Expired |
| US6635564B1 | Semiconductor structure and method of fabrication including forming aluminum columns | Electricity | 1 | Expired |
| US7473636B2 | Method to improve time dependent dielectric breakdown | Electricity | 0 | Active |
| US6960306B2 | Low Cu percentages for reducing shorts in AlCu lines | Electricity | 0 | Expired |
| US7361584B2 | Detection of residual liner materials after polishing in damascene process | Electricity | 0 | Expired |
| US6413866B1 | Method of forming a solute-enriched layer in a substrate surface and article formed thereby | Electricity | 0 | Expired |
| US8465657B2 | Post chemical mechanical polishing etch for improved time dependent dielectric breakdown reliability | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.