Elimination of walkout in high voltage trench isolated devices
US6362064B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 21, 1998 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Apr 21, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76291
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Walkout in high voltage trench isolated semiconductor devices is inhibited by applying a voltage bias signal directly to epitaxial silicon surrounding the device. Voltage applied to the surrounding epitaxial silicon elevates the initial breakdown voltage of the device and eliminates walkout. This is because voltage applied to the surrounding epitaxial silicon reduces the strength of the electric field between the silicon of the device and the surrounding silicon. Specifically, application of a positive voltage bias signal to surrounding epitaxial silicon equal to or more positive than the most positive potential occurring at the collector during normal operation of the device ensures that no walkout will occur.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.