Method of fabricating an SOI wafer by hydrogen ion delamination without independent bonding heat treatment
US6362076B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 20, 1999 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Apr 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a method of fabricating an SOI wafer by a hydrogen ion delamination method wherein a surface of an SOI layer is not polished but is subjected to heat treatment in a reducing atmosphere containing hydrogen after a bonding heat treatment, a method of fabricating an SOI wafer by a hydrogen ion delamination method wherein a surface of an SOI layer is not polished but subjected to heat treatment in a reducing atmosphere containing hydrogen after delaminating heat treatment, and a SOI wafer fabricated by the methods. There are provided a method of fabricating an SOI wafer by a hydrogen ion delamination method wherein a damage layer remaining on the surface of the SOI layer after delamination is removed and surface roughness is improved without polishing, so that uniform thickness of the SOI layer can be achieved, and to simplify the process therefor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.