Structure comprising a thin layer of material made up of conductive zones and insulating zones and a method of manufacturing such a structure
US6362077B1 · kind B1 · utility
32Cited by
7References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 6, 1999 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Oct 6, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A structure comprising a thin layer (2) that can be integral with a support (3), the thin layer being a layer of a semiconductor material made insulating by ion implantation except for at least one zone that permits a vertical electrical connection through the entire thickness of the thin layer (2). A method of manufacturing such a structure is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.