Forming a conductive structure in a semiconductor device
US6362086B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 15, 1999 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Sep 15, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32105
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal suicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multilayer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.