Hydrogenated silicon carbide as a liner for self-aligning contact vias
US6362094B1 · kind B1 · utility
12Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 2000 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Aug 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76837
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of fabricating a self-aligning contact opening comprising: (a) forming a dielectric layer over a semiconductor substrate and gate electrodes located on the semiconductor substrate, (b) forming a carbide liner over the dielectric layer, and (c) etching at least a portion the carbide liner to form a self-aligning contact opening between the gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.