Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constant
US6362108B1 · kind B1 · utility
1Cited by
4References
10Claims
0Family size
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Key dates
| Filing date | Apr 20, 2000 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Apr 20, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09G1/02
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition for mechanical chemical polishing of a layer in an insulating material based on a polymer with a low dielectric constant, comprising an acid aqueous suspension of cationized colloidal silica containing individualized colloidal silica particles not linked to each other by siloxane bonds and water as the suspension medium, process for mechanical chemical polishing of a layer of insulating material based on a polymer with a low dielectric constant and abrasive for the mechanical chemical polishing of a layer of insulating material based on a polymer with a low dielectric constant.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.