Method and device for nondestructive detection of crystal defects

US6362487B1 · kind B1 · utility

Assignee

• Wacker Siltronic Gesellschaft Fur Halbleitermaterialien AG · DE

Inventors

• Andreas Ehlert · Mehring, DE
• Michael Kerstan · Burghausen, DE
• Holger Lundt · Burghausen, DE
• Dieter Helmreich · Burghausen, DE

Key dates

• Filing date: May 25, 1999
• Grant date: Mar 26, 2002
• Expiry date: May 25, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L22/12
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

The nondestructive detection and characterization of crystal defects in monocrystalline semiconductor material is by a combination of photoluminescence heterodyne spectroscopy, photothermal heterodyne spectroscopy and SIRD.