Reading method for non-volatile memories with sensing ratio variable with the reading voltage, and device to realize said method
US6363015B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2000 |
| Grant date | Mar 26, 2002 |
| Priority date | — |
| Expiry date | Jun 8, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/28
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A reading method for non-volatile memory cells is which includes a first step in which a memory cell of the matrix is selected by the row decoder and by the column multiplexer, a second step of preload and equalization during which the voltage on the drain electrode of the selected memory cell reaches a defined value and a third step during which the selected cell is read with a sensing ratio depending on the reading voltage of said cell. Moreover a device for the reading of the cells is described, which comprises a modulation branch with at least one modulation transistor and a load generator associated with said modulation transistor in such a way to modulate analogous the transconductance of one of the two load transistors as a function of the reading voltage of the memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.