300 mm CVD chamber design for metal-organic thin film deposition
US6364949B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 19, 1999 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Oct 19, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/5096
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to plasma-enhanced chemical vapor deposition (PECVD) and related chamber hardware. Embodiments of the present invention include a PECVD system for depositing a film of titanium nitride from a TDMAT precursor. The present invention broadly provides a chamber, a gas delivery assembly, a pedestal which supports a substrate, and a plasma system to process substrates. In general, the invention includes a chamber body and a gas delivery assembly disposed thereon to define a chamber cavity. A pedestal movably disposed within the chamber cavity is adapted to support a substrate during processing. The gas delivery assembly is supported by the chamber body and includes a temperature control plate and a showerhead mounted thereto. Preferably, the interface between the showerhead and temperature control plate is parallel to a radial direction of the gas delivery assembly to accommodate lateral thermal expansion without separation of the showerhead and the temperature control plate. A blocker plate, or baffle plate, may be disposed between the showerhead and temperature control plate to facilitate dispersion of gases delivered thereto.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.