Method of manufacturing semiconductor device
US6365425B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 27, 2000 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Jun 27, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/9501
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device includes fetching inspection chip information including information of a dust-particle/fault on an inspection chip by irradiating the inspection chip of a semiconductor wafer with an optical beam and by detecting the scattering/diffracting beam of the optical beam, fetching reference chip information as information of a reference chip without a dust-particle/fault, comparing the inspection chip information and the reference chip information to determine a dust-particle/fault, and determining whether the dust-particle/fault is located on a pattern or outside of the pattern by matching between the dust-particle/fault information and design pattern data as data of a prepared pattern. The dust-particle/fault is determined to be a fatal dust-particle/fault when the dust-particle fault is located on the pattern or to be a non-fatal dust-particle fault when the dust-particle/fault is located outside of the pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.