Method for nitride based laser diode with growth substrate removed using an intermediate substrate
US6365429B1 · kind B1 · utility
181Cited by
4References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 26, 1999 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Mar 26, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for placing nitride laser diode arrays on a thermally conducting substrate is described. The method uses an excimer laser to detach the nitride laser diode from the sapphire growth substrate after an intermediate substrate has been attached to the side opposite the sapphire substrate. A thermally conducting substrate is subsequently bonded to the side where the sapphire substrate was removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.