Formation of silicided ultra-shallow junctions using implant through metal technology and laser annealing process
US6365446B1 · kind B1 · utility
25Cited by
10References
24Claims
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Key dates
| Filing date | Jul 3, 2000 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Jul 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing MOS type transistors with deep source/drain junctions and thin, silicided contacts with desireable interfacial and electrical properties. The devices are produced by a method that involves pre-amorphization of the gate, source and drain regions by ion-implantation, the formation of a metal layer, ion implantation through the metal layer, the formation of a capping layer and a subsequent laser anneal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.