Isotropic resistor protect etch to aid in residue removal
US6365481B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 2000 |
| Grant date | Apr 2, 2002 |
| Priority date | — |
| Expiry date | Sep 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Various methods of fabricating a circuit structure, such as a gate electrode or a resistor are provided. In one aspect, a method of fabricating a circuit structure is provided that includes forming a silicon structure on a substrate and forming an oxide film on the silicon structure. A first portion of the oxide film is masked while a second portion is left unmasked. The second portion of the oxide film is removed by isotropic plasma etching to expose a portion of the silicon structure, and the first portion of the oxide film is unmasked. Use of isotropic etching for removal of a resistor protect oxide reduces the potential for isolation structure damage due to aggressive overetching associated with conventional anisotropic etching techniques.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.