Edge termination of semiconductor devices for high voltages with resistive voltage divider

US6365930B1 · kind B1 · utility

Assignee

• STMicroelectronics SA

Inventors

• Antonino Schillaci · Messina, IT
• Antonio Giuseppe Grimaldi · Mascalucia, IT
• Giuseppe Ferla · Catania, IT

Key dates

• Filing date: Jun 1, 2000
• Grant date: Apr 2, 2002
• Expiry date: Jun 1, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/83

Abstract

Semiconductor device for high voltages including at least one power component and at least one edge termination. The edge termination includes a voltage divider including a plurality of MOS transistors in series, and the edge termination is connected between non-driveble terminals of said power component.